Offering numerous advantages, the superjunction structure represents a substantial advancement in high-voltage MOSFET technology. Together with die size, RDS(on), gate capacitances, and output charge are all simultaneously decreased.
Product | Marketing Status | Configuration | VRRM(V) max. | IF(A) max. | VF (V) max | IFSM(A) max. | IR(uA) max. | trr (ns) max | TJ(°C) max. | TJ(°C) min. | ECCN(US) | Compliance | |
SJ60R040U | Active | Single | 150 | -55 | EAR99 | ||||||||
SJ60R190U | Active | Single | 150 | -55 | EAR99 | ||||||||
SJ65R040FU | Active | Single | 150 | -55 | EAR99 | ||||||||
SJ65R190 | Active | Single | 150 | -55 | EAR99 | | |||||||
SJ65R190B | Active | Single | 150 | -55 | EAR99 | | |||||||
SJ65R190F | Active | Single | 150 | -55 | EAR99 | | |||||||
SJ65R190U | Active | Single | 150 | -55 | EAR99 | ||||||||
SJ65R340D | Active | Single | 150 | -55 | EAR99 | | |||||||
SJ65R340F | Active | Single | 150 | -55 | EAR99 | | |||||||
SJ65R380D | Active | Single | 150 | -55 | EAR99 | | |||||||
SJ65R600D | Active | Single | 150 | -55 | EAR99 | | |||||||
SJ65R600F-M | Active | Single | 150 | -55 | EAR99 | ||||||||
SJ65R950F | Active | Single | 150 | -55 | EAR99 | | |||||||
SJ70R550F | Active | Single | 150 | -55 | EAR99 | | |||||||
SJ70R710D | Active | Single | 150 | -55 | EAR99 | | |||||||
SJ80R350 | Active | Single | 150 | -55 | EAR99 | | |||||||
SJ80R350B | Active | Single | 150 | -55 | EAR99 | | |||||||
SJ80R350F | Active | Single | 150 | -55 | EAR99 | | |||||||
SJ80R650F | Active | Single | 150 | -55 | EAR99 | | |||||||
SJ80R750F | Active | Single | 150 | -55 | EAR99 | | |||||||
SJ80R900D | Active | Single | 150 | -55 | EAR99 | | |||||||
SJ90R350 | Active | Single | 150 | -55 | EAR99 | | |||||||
SJ90R350B | Active | Single | 150 | -55 | EAR99 | | |||||||
SJ90R350F | Active | Single | 150 | -55 | EAR99 | | |||||||
SJ90R350U | Active | Single | 150 | -55 | EAR99 | ||||||||
SJM60R070U | Active | Single | 150 | -55 | EAR99 | ||||||||
SJM60R099F | Active | Single | 150 | -55 | EAR99 | | |||||||
SJM60R099U | Active | Single | 150 | -55 | EAR99 | ||||||||
SJM60R240F | Active | Single | 150 | -55 | EAR99 | | |||||||
SJM60R490D | Active | Single | 150 | -55 | EAR99 | |
On a portion of the N-layer, SJ-MOS (also known as DTMOS) creates a columnar P layer, or P-pillar layer, and alternates P-N layers. The depletion layer covers the drifting layer, the N-layer, when VDS is applied. Nonetheless, the spreads in the SJ-MOS and typical D-MOS (referred to as π-MOS in our instance) differ. Refer to the graphic of electric field intensity. The condition in the depletion layer is indicated by the intensity of the electric field.)
The P/N-layer interface in D-MOS has the strongest electric field, and breakover, or breakdown phenomena, happens when this portion surpasses the material-silicon limit. This represents the breakdown voltage's upper limit. Conversely, SJ-MOS exhibits consistent electric field intensity within N-layers. Consequently, lower-resistance N-layers can be used in the design of SJ-MOS, enabling