Shenzhen HJL Electronics Co., Ltd.
Shenzhen HJL Electronics Co., Ltd.

Offering numerous advantages, the superjunction structure represents a substantial advancement in high-voltage MOSFET technology. Together with die size, RDS(on), gate capacitances, and output charge are all simultaneously decreased.

Types of Super Junction MOSFETs

Product Marketing Status Configuration VRRM(V) max. IF(A) max. VF (V) max IFSM(A) max. IR(uA) max. trr (ns) max TJ(°C) max. TJ(°C) min. ECCN(US) Compliance
SJ60R040U Active Single 150 -55 EAR99
SJ60R190U Active Single 150 -55 EAR99
SJ65R040FU Active Single 150 -55 EAR99
SJ65R190 Active Single 150 -55 EAR99
SJ65R190B Active Single 150 -55 EAR99
SJ65R190F Active Single 150 -55 EAR99
SJ65R190U Active Single 150 -55 EAR99
SJ65R340D Active Single 150 -55 EAR99
SJ65R340F Active Single 150 -55 EAR99
SJ65R380D Active Single 150 -55 EAR99
SJ65R600D Active Single 150 -55 EAR99
SJ65R600F-M Active Single 150 -55 EAR99
SJ65R950F Active Single 150 -55 EAR99
SJ70R550F Active Single 150 -55 EAR99
SJ70R710D Active Single 150 -55 EAR99
SJ80R350 Active Single 150 -55 EAR99
SJ80R350B Active Single 150 -55 EAR99
SJ80R350F Active Single 150 -55 EAR99
SJ80R650F Active Single 150 -55 EAR99
SJ80R750F Active Single 150 -55 EAR99
SJ80R900D Active Single 150 -55 EAR99
SJ90R350 Active Single 150 -55 EAR99
SJ90R350B Active Single 150 -55 EAR99
SJ90R350F Active Single 150 -55 EAR99
SJ90R350U Active Single 150 -55 EAR99
SJM60R070U Active Single 150 -55 EAR99
SJM60R099F Active Single 150 -55 EAR99
SJM60R099U Active Single 150 -55 EAR99
SJM60R240F Active Single 150 -55 EAR99
SJM60R490D Active Single 150 -55 EAR99

FAQs about Super Junction MOSFETs

  • How are super-junction MOSFETs different from common D-MOS?

    On a portion of the N-layer, SJ-MOS (also known as DTMOS) creates a columnar P layer, or P-pillar layer, and alternates P-N layers. The depletion layer covers the drifting layer, the N-layer, when VDS is applied. Nonetheless, the spreads in the SJ-MOS and typical D-MOS (referred to as π-MOS in our instance) differ. Refer to the graphic of electric field intensity. The condition in the depletion layer is indicated by the intensity of the electric field.)


    The P/N-layer interface in D-MOS has the strongest electric field, and breakover, or breakdown phenomena, happens when this portion surpasses the material-silicon limit. This represents the breakdown voltage's upper limit. Conversely, SJ-MOS exhibits consistent electric field intensity within N-layers. Consequently, lower-resistance N-layers can be used in the design of SJ-MOS, enabling

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