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0.8A, 20V, 0.45W, N Channel, Small Signal MOSFETs
| Package | DFN1006-3 |
| AEC Qualified | NO |
| Pb Free | YES |
| Halide free | YES |
| Reach | YES |
| RoHS | YES |
| Marketing Status | Active |
| Configuration | Single |
| Channel Polarity | N |
| ESD | Y |
| TJ(°C) max. | 150 |
| TJ(°C) min. | -55 |
| PD(W) Max. | 0.45 |
| V(BR)DSS(V) Min. | 20 |
| VGS(V) Max. | ±10 |
| ID(A) Max. | 0.8 |
| IGSS(uA) Max. | ±10 |
| VGS(th)(V) Max. | 1 |
| RDS(on)(mΩ)@ 10V Typ. | / |
| RDS(on)(mΩ)@ 10V Max. | / |
| RDS(on)(mΩ)@ 4.5V Typ. | 280 |
| RDS(on)(mΩ)@ 4.5V Max. | 400 |
| RDS(on)(mΩ)@ 2.5V Typ. | 350 |
| RDS(on)(mΩ)@ 2.5V Max. | 650 |
| RDS(on)(mΩ)@ 1.8V Typ. | 400 |
| RDS(on)(mΩ)@ 1.8V Max. | 800 |
| Qg(nc) Typ | / |
| @Vgs(V) | / |
| ECCN(US) | EAR99 |
