Metal-Oxide-Semiconductor Field-Effect transistors, or MOSFETs, are electrical devices with a range of uses that include switching and signal amplification at medium and low voltages. Both low voltage (below 50V) and medium voltage (50V to 400V) levels are used by these devices.
Product | Marketing Status | Configuration | VRRM(V) max. | IF(A) max. | VF (V) max | IFSM(A) max. | IR(uA) max. | trr (ns) max | TJ(°C) max. | TJ(°C) min. | ECCN(US) | Compliance | |
BL011N06TH-TL | Active | Single | 175 | -55 | EAR99 | | |||||||
BL014N04T-5DL8 | Active | Single | 150 | -55 | EAR99 | | |||||||
BL014N04T-TL | Active | Single | 150 | -55 | EAR99 | | |||||||
BL016N10TH-TL | Active | Single | 175 | -55 | EAR99 | | |||||||
BL018N04TH-5DL8 | Active | Single | 150 | -55 | EAR99 | | |||||||
BL019N04TH-5DL8 | Active | Single | 150 | -55 | EAR99 | | |||||||
BL020N04T | Active | Single | 150 | -55 | EAR99 | | |||||||
BL020N04TB | Active | Single | 150 | -55 | EAR99 | | |||||||
BL020N08TH-TL | Active | Single | 150 | -55 | EAR99 | | |||||||
BL021N04T-5DL8 | Active | Single | 150 | -55 | EAR99 | | |||||||
BL025N03-5DL8 | Active | Single | 150 | -55 | EAR99 | | |||||||
BL025N03D | Active | Single | 150 | -55 | EAR99 | | |||||||
BL027N04T | Active | Single | 175 | -55 | EAR99 | | |||||||
BL027N04T-5DL8 | Active | Single | 150 | -55 | EAR99 | | |||||||
BL027N04TD | Active | Single | 175 | -55 | EAR99 | | |||||||
BL02N06C | Active | Single | 150 | -55 | EAR99 | | |||||||
BL02N06C-3L | Active | Single | 150 | -55 | EAR99 | | |||||||
BL02N10C SOT-23 | Active | Single | 150 | -55 | EAR99 | | |||||||
BL02N10R | Active | Single | 150 | -55 | EAR99 | | |||||||
BL030N03T-5DL8 | Active | Single | 150 | -55 | EAR99 | | |||||||
BL030N04T | Active | Single | 150 | -55 | EAR99 | | |||||||
BL030N085TH-TL | Active | Single | 175 | -55 | EAR99 | | |||||||
BL030N08THB | Active | Single | 150 | -55 | EAR99 | | |||||||
BL031N06T-5DL8 | Active | Single | 150 | -55 | EAR99 | | |||||||
BL033N03-5DL8 | Active | Single | 150 | -55 | EAR99 | | |||||||
BL033N08TH | Active | Single | 150 | -55 | EAR99 | | |||||||
BL035N03 | Active | Single | 150 | -55 | EAR99 | | |||||||
BL035N03-5DL8 | Active | Single | 150 | -55 | EAR99 | | |||||||
BL035N04-5DL8 | Active | Single | 150 | -55 | EAR99 | | |||||||
BL035N04T-5DL8 | Active | Single | 150 | -55 | EAR99 | |
Rn is intimately correlated with the device's voltage rating because this layer's function is to maintain the blocking voltage. A low-voltage transistor only needs a thin layer with a greater doping level, or less resistant, but a high-voltage MOSFET requires a thick, low-doped layer, or extremely resistive.
HJL Electronics' low & medium voltage MOSFETs keep low RDS(on) features, low power loss and noise, narrow band of the gate threshold voltage, small VGS ringing waveform during switching, more controlled switching dv/dt by gate resistance, and excellent avalanche endurance.